Research Staff Profile
Abram Van Der Geest
Office S2 412
Dr. Abram Van Der Geest recieved his Ph.D. in Applied Physics from the Colorado School of Mines in December 2009. Since that time he has been a fellow at the CEA (Commissariat d'Energie Atomique et Energie Alternative) in Grenoble and Bruyères-le-Châtel and a researcher at the Ecole National Superieure des Chime de Paris. Currently, he is a research associate with Aleksey Kolmogorov's group in the department of physics at Binghamton University, Binghamton, NY.
New materials drive the advancement of new technologies. However, the discovery of new materials are expensive and time consuming. Until recently experimental methods have been the driving force behind the discovery of materials. While efforts have progressed to use computational methods to supplement many of the repetivite expensive experiments, the current state of ab initio (quantum based atomic scale) calculations still requires developement of the efficiency of predicting new materials. Two areas of computational effort support this developement. The first is the developement of new tools that allow for the submittal of large numbers of ab initio calculations and, more importantly, to analyze the resulting data sets throught the use of high-through put techniques. The second area is the creation of tools that perform optimizations of materials based upon stability to determine never before seen materials. MAISE is such a tool that uses evolutionary algorithms to predict new materials and structures.
In recent years the microelectronics industry has begun transitioning the dielectric material in CMOS transistors from silicon dioxide to hafnium based dielectrics such as HfO2 or HfSiOx silicates. The higher dielectric function provided by these high-K materials allows for the continued reduction in size of transistors by maintaining sufficiently low tunneling currents. Nevertheless, this new class of dielectrics introduces unexpected complications. Thus the study of the new interfaces that are created by the use of the new materials is of significant interest. Therefore I have been involved in studying not only the HfO2/SiO2 interface put also the Si/SiO2 and HfO2/Metal interfaces.