Contact Aligner (Photolithography)

contact_litho_01Contact Mask Aligner

Suss Microtec MJB4 

Manual mask alignment and exposure

Sample size: 1” to 4” wafer/substrate, thickness: up to 4 mm.

Mask Size 2” x 2” to 5” x 5”. Mask thickness: up to 4.8 mm.

350 W Hg lamp source (i line exposures)

Constant intensity power supply

Hard contact, soft contact and vacuum contact print modes